Optical and electrical characterization of SiGe layers for vertical sub-100 nm MOS transistors

Thin Solid Films

Volumn 336, Issue 1-2, 1998, Pages 323-325

  Zhang, Xinhui ^a   Unelind, Peter ^a   Kleverman, Mats ^a   Olajos, Janos ^b  

^a Department of Solid State Physics ^*  (Sweden)

^b SULTAN QABOOS UNIVERSITY   (Oman)

Author keywords

Chemical vapor deposition; Defects; Molecular beam epitaxy; Photocurrent; Photoluminescence; SiGe Si heterostructures

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOTOCURRENTS; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THIN FILM TRANSISTORS;

PSEUDOMORPHIC GROWTH; SILICON GERMANIUM;

MOSFET DEVICES;

EID: 0032310143     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01301-7     Document Type: Article

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