Comparison of lateral and vertical Si-MOSFETs with ultra short channels

Thin Solid Films

Volumn 336, Issue 1-2, 1998, Pages 313-318

  Behammer, D ^a   Zeuner, M ^a   Hackbarth, T ^a   Herzog, J ^a   Schafer, M ^b   Grabolla, T ^c  

^a DAIMLER AG   (Germany)

^b CADwalk   (Germany)

^c IHP   (Germany)

Author keywords

Si MOSFETs; Ultra short channels

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; ETCHING; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; THIN FILM TRANSISTORS;

ULTRA SHORT CHANNELS;

MOSFET DEVICES;

EID: 0032309774     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01285-1     Document Type: Article

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