A 3.3-V, 500-Mb/s/ch parallel optical receiver in 1.2-μm GaAs technology

IEEE Journal of Solid-State Circuits

Volumn 33, Issue 12, 1998, Pages 2197-2204

  Yang, Jungwook ^a,b,d,e   Choi, Joongho ^a,b,c,d,f,g   Kuchta, Daniel M ^a,b,h   Stawiasz, Kevin G ^b,i,j   Pepeljugoski, Petar ^{a,b,h,k,l,m,n}   Ainspan, H A ^b  

^a IEEE   (Serbia)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c University of Seoul   (South Korea)

^d Seoul National University   (South Korea)

^e MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^f UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

^g Department of Electrical Engineering   (Serbia)

^h UNIVERSITY OF CALIFORNIA   (United States)

ⁱ Lawrence Institute of Technology   (Serbia)

^j UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^k SS CYRIL AND METHODIUS UNIVERSITY   (Macedonia)

^l UNIVERSITY OF BELGRADE   (Serbia)

^m Telecommunication Center   (Serbia)

ⁿ Och Spine at New York Presbyterian Hospitals   (United States)

more..

Author keywords

Integrated optoelectronics; MESFET's; Optical receivers; Photodetectors

Indexed keywords

CMOS INTEGRATED CIRCUITS; MESFET DEVICES; OPTICAL COMMUNICATION; PHOTODETECTORS; SEMICONDUCTING GALLIUM ARSENIDE;

DATA TRANSFER RATE; OPTICAL RECEIVER;

INTEGRATED OPTOELECTRONICS;

EID: 0032308787     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.735704     Document Type: Article

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