An empirical fringing capacitance dependent threshold voltage model for non-uniformly doped submicron MOSFETs

Solid-State Electronics

Volumn 39, Issue 11, 1996, Pages 1687-1691

  Maneesha, ^a   Khanna, M K ^a   Hadlar, S ^a   Gupta, R S ^a  

^a UNIVERSITY OF DELHI   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC FIELD EFFECTS; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

CHARGE SCREENING EFFECTS; EMPIRICAL THRESHOLD VOLTAGE MODEL; GATE CAPACITANCE;

MOSFET DEVICES;

EID: 0030290983     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(96)00080-9     Document Type: Article

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