Cellular Automaton Particle Simulation and Sensitivity Analysis of GaAs-MITATT-Diodes for Operation at 200 GHz

AEU-Archiv fur Elektronik und Ubertragungstechnik

Volumn 52, Issue 5, 1998, Pages 329-334

  Liebig, Dennis ^a,b,c,d   Schünemann, Klaus ^a,b  

^a HAMBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b TU München ^*

^c TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^d TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

Cellular Automaton simulation; Impact ionization; MITATT Diode; Non local transport; Zener tunneling

Indexed keywords

CARRIER MOBILITY; COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; IONIZATION OF SOLIDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SENSITIVITY ANALYSIS; TRANSIT TIME DEVICES;

CELLULAR AUTOMATON PARTICLE SIMULATION; ZENER TUNNELING;

SEMICONDUCTOR DIODES;

EID: 0032303573     PISSN: 00011096     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (14)

1. Tschernitz, M.; Freyer, J.; Grothe, H.: GaAs Read-type IMPATT-diode for D-band. Electronics Letters 30 (1994), 1070-1071.
2. Liebig, D.: Cellular automata simulation of GaAs-IMPATT-diodes. Proc. 6th Int. Conf. SISDEP, Erlangen, 74. 1995.
3. Jacoboni, C.; Lugli, P.: The Monte Carlo method for semiconductor device simulation. Wien-New York: Springer, 1989.
4. Curow, M.; Liebig, D.; Schünemann, K.: Comparison of different carrier transport models for simulations of W- and D-band GaAs IMPATT diodes. Proc. of the 26th EuMC., Prague, 1996. 383-385.
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10. Benz, C.; Claassen, M.; Liebig, D.: Tunneling and impact ionization at high electric fields in abrupt GaAs P-I-N structures. Journal of Applied Physics 81 (1997), 3181-3185.
11. Liebig, D.; Lugli, P.; Vogl, P.; Claassen, M.; Harth, W.: Tunneling and ionization currents in GaAs PIN diodes. Microelectron. Eng. 19 (1992), 127-130.
12. Ostermeir, R.; Lugli, P.; Liebig, D.; Koch, F.; Vogl, P.; Poebl, M.; Harth, W.: The spectral distribution of light emission from hot carriers in GaAs PIN diodes-experiments and Monte Carlo analysis. Semicond. Sci. Technol. 9 (1994), 671-673.
13. Zandler, G.; Oberhuber, R.; Liebig, D.; Vogl, P.; Saraniti, M.; Lugli, P.: Cellular automaton study of time-dynamics of avalanche breakdown in IMPATT diodes. Int. Workshop on Comput. Electronics, Notredame Indiana USA, 1997.
14. Liebig, D.; Schünemann, K.: Nonlocal transport effects in hyperabrupt GaAs IMPATT diodes for operation at and beyond 200 GHz. Proc. Int. Conf. on Microwave and Millimeter Wave Technology, Beijing, 1998. to be published.