Tunneling and impact ionization at high electric fields in abrupt GaAs p-i-n structures

Journal of Applied Physics

Volumn 81, Issue 7, 1997, Pages 3181-3185

  Benz, C ^a   Claassen, M ^a   Liebig, D ^b  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b HAMBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; IONIZATION; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; MONTE CARLO METHODS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

IMPACT IONIZATION; KANE MODEL; TUNNEL CURRENTS;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0031118280     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.364147     Document Type: Article

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