Reflectance difference spectroscopy of GaAs asymmetric surface quantum wells above the fundamental gap

Physica Status Solidi (A) Applied Research

Volumn 170, Issue 2, 1998, Pages 317-321

  Lastras Martinez L F ^a,c,d   Santos, P V ^b   Ronnow D ^a   Cardona, M ^a   Specht, P ^a   Eberl, K ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^c Unidad Durango   (Mexico)

^d UNIVERSIDAD AUTÓNOMA DE SAN LUIS POTOSÍ   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; MOLECULAR BEAM EPITAXY; REFLECTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SPECTROSCOPY; SURFACE TREATMENT;

ALUMINUM ARSENIDE; OPTICAL ANISOTROPY; REFLECTANCE DIFFERENCE SPECTROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032302760     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199812)170:2<317::AID-PSSA317>3.0.CO;2-V     Document Type: Article

References (12)

1. D.E. ASPNES and A.A. STUDNA, Phys. Rev. Lett. 54, 1956 (1985).
2. W.L. MOCHAN and R.G. BARRERA, Phys. Rev. Lett. 55, 1192 (1985).
3. S.E. ACOSTA-ORTÍZ and A. LASTRAS-MARTÍNEZ, Phys. Rev. B 40, 1426 (1989).
4. L.F. LASTRAS-MARTÍNEZ and A. LASTRAS-MARTÍNEZ, Solid State Commun. 98, 479 (1996).
5. D.E. ASPNES et al., J. Vac. Sci. Technol. B 6, 1127 (1988).
6. D.E. ASPNES et al., Phys. Rev. Lett. 61, 2782 (1988).
7. L.F. LASTRAS-MARTÍNEZ et al., to be published.
8. N. ESSER et al., J. Vac. Sci. Technol. B 13, 1 (1995).
9. D.E. ASPNES et al., J. Vac. Sci. Technol. A 6, 1327 (1988).
10. M. GARRIGA et al., Phys. Rev. B 36, 3254 (1987).
11. I. KAMIYA, D.E. ASPNES, L.T. FLOREZ, and J.P. HARBISON, Phys. Rev. B 46, 15894 (1992).
12. Y.C. CHANG and D.E. ASPNES, Phys. Rev. B 41, 12002 (1990).