Reflectance difference spectroscopy of GaAs asymmetric surface quantum wells above the fundamental gap

Physica Status Solidi (A) Applied Research

Volumn 170, Issue 2, 1998, Pages 317-321

  Lastras Martinez L F ^a,c,d   Santos, P V ^b   Ronnow D ^a   Cardona, M ^a   Specht, P ^a   Eberl, K ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^c CONACyT ^*  (Mexico)

^d UNIVERSIDAD AUTÓNOMA DE SAN LUIS POTOSÍ   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; MOLECULAR BEAM EPITAXY; REFLECTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SPECTROSCOPY; SURFACE TREATMENT;

ALUMINUM ARSENIDE; OPTICAL ANISOTROPY; REFLECTANCE DIFFERENCE SPECTROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032302760     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199812)170:2<317::AID-PSSA317>3.0.CO;2-V     Document Type: Article

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