p-type diffusion in InGaAs epitaxial layers using two models: A concentration dependent diffusivity and a point defect nonequilibrium

Solid State Communications

Volumn 101, Issue 3, 1997, Pages 159-162

  Marcon, J ^a   Gautier, S ^a   Koumetz, S ^a   Ketata, K ^a   Ketata, M ^a   Launay, P ^b  

^a UNIVERSITÉ ET INSA DE ROUEN   (France)

^b ORANGE LABS   (France)

Author keywords

B. epitaxy; C. impurities in semiconductors; C. point defects

Indexed keywords

ANNEALING; BERYLLIUM; CALCULATIONS; CRYSTAL IMPURITIES; DIFFUSION; EPITAXIAL GROWTH; MATHEMATICAL MODELS; POINT DEFECTS; SEMICONDUCTING INDIUM COMPOUNDS;

INDIUM GALLIUM ARSENIDE; POST GROWTH ANNEALING;

SEMICONDUCTING FILMS;

EID: 0030821093     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(96)00557-1     Document Type: Article

References (14)

1. Koumetz, S., Marcon, J., Ketata, K., Ketata, M., Launay, P. and Benchimol, J.L., Appl. Phys. Lett., 67, 1995, 2161.
2. Scott, E.G., Wake, D., Spiller, G.D.T. and Davies, G.J., J. Appl. Phys., 66, 1989, 5344.
3. Ilegems, M., J. Appl. Phys., 48, 1977, 1278.
4. Schubert, E.F., Kuo, J.M., Kopf, R.F., Luftman, H.S., Hopkins, L.C. and Sauer, N.J., J. Appl. Phys., 67, 1990, 1969.
5. McLevige, W.V., Vaidyanathan, K.V., Streetman, B.G., Ilegems, M., Comas, J. and Plew, L., Appl. Phys. Lett., 33, 1978, 127.
6. Enquist, P., Hutchby, J.A. and De Lyon, T.J., J. Appl. Phys., 63, 1988, 4485.
7. Hu, J.C., Deal, M.D. and Plummer, J.D., J. Appl. Phys., 78, 1995, 1595.
8. Frank, F.C. and Turnbull, D., Phys. Rev., 104, 1956, 617.
9. Ghezzo, M., J. Elec. Soc., 120, 1973, 1123.
10. Zahari, M.D. and Tuck, B., J. Phys. D: Appl. Phys., 18, 1985, 1585.
11. Antoncik, E., Phys. Stat. Sol. (a), 149, 1995, 557.
12. Yu, S., Tan, T.Y. and Gösele, U., J. Appl. Phys., 59, 1991, 3547.
13. Jourdan, N., Alexandre, F., Dubon-Chevallier, C., Dangla, J. and Gao, Y., IEEE Trans. Elec. Dev., 39, 1992, 767.
14. Gösele, U. and Morehead, F., J. Appl. Phys., 52, 1981, 4617.