IDDQ defect detection in deep submicron CMOS ICs

Proceedings of the Asian Test Symposium

Volumn , Issue , 1998, Pages 150-152

  Kundu, Sandip ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT DETECTION;

CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENT MEASUREMENT; LEAKAGE CURRENTS;

INTEGRATED CIRCUIT TESTING;

EID: 0032294841     PISSN: 10817735     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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2. Z. Liu et. al., "Threshold voltage model for deep sub-micrometer MOSFETs," IEEE Transactions on Electron Devices, pages 86-95, 1993
3. L. Vadasz and A. S. Grove, "Temperature characteristics of MOS transistors below saturation" IEEE Transactions on Electron Devices, pages 190-192, 1966
4. S. M. Sze, "Semiconductor Devices: Physics and Technology," ISBN 0-471-87424-8, 1985
5. Semiconductor Industry Association, "The national technology roadmap for semiconductors: technology needs", 1997 edition
6. A. Gattiker et. al., "Current signatures for production testing, " Proceedings of IEEE International Workshop on IDDQ testing," pages 25-28, 1996
7. W. Maly et. al, "Process monitoring oriented IC testing," International Test Conference, pages 527-532, 1989