Reduced timing jitter of two-section 1.55-μm laser diodes under gain-/loss-switching regime at multigigahertz rates

IEEE Photonics Technology Letters

Volumn 10, Issue 12, 1998, Pages 1694-1696

  Shen, A ^b,c   Bouchoule, S ^d   Cuisin, C ^c   Crozat, P ^c   Lourtioz, J M ^a,c  

^a IEEE

^b NOKIA RESEARCH CENTER   (United States)

^c UNIV PARIS SUD   (France)

^d ORANGE LABS   (France)

Author keywords

Device modeling; Gain switching; Optical pulse generation; Semiconductor lasers; Timing jitter

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; LASER PULSES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS; SWITCHING;

GAIN SWITCHING; LOSS SWITCHING; OPTICAL PULSE GENERATION; PICOSECOND PULSES; TIMING JITTER;

SEMICONDUCTOR LASERS;

EID: 0032287832     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.730472     Document Type: Article

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