Chirp tailoring in Q-switched InGaAsP lasers using electroabsorption loss section

Electronics Letters

Volumn 32, Issue 20, 1996, Pages 1886-1888

  Thedrez, B ^a   Lourtioz, J M ^a   Bouchoule, S ^b   Kazmierski, C ^b  

^a CNRS   (France)

^b ORANGE LABS   (France)

Author keywords

Chirp; Electro absorption modulators; Q switching; Semiconductor junction lasers

Indexed keywords

FREQUENCY MODULATION; LASER PULSES; MODULATORS; Q SWITCHING;

CHIRP; ELECTROABSORPTION MODULATORS;

SEMICONDUCTOR LASERS;

EID: 0030235618     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961265     Document Type: Article

References (4)

1. TSANG, D.Z., and WALPOLE, J.N.: 'Q-switched semiconductor diode lasers', IEEE J. Quantum Electron., 1983, 19, (2), pp. 145-156
2. STELMAKH, N., and LOURTIOZ, J.M.: 'Analysis of modal chirp in Q-switched semiconductor lasers', Electron. Lett., 1991, 27, (2), pp. 1856-1858
3. BOUCHOULE, S., STELMAKH, N., CAVELIER, M., and LOURTIOZ, J.M.: 'Highly attenuating external cavity for picosecond tunable emission from gain/Q-switched laser diodes', IEEE J. Quantum Electron., 1993, 29, (6), pp. 1693-1700
4. OSINSKI, M., and BUUS, J.: 'Linewidth broadening factor in semiconductor lasers - an overview', IEEE J. Quantum Electron., 1987, 23, (1), pp. 9-29