Displacement current correction for the dc and transient simulation of single electron transistors

Journal of the Korean Physical Society

Volumn 33, Issue SUPPL. 2, 1998, Pages

  Lee, H S ^a   Yu, Y S ^a   Hwang, S W ^a  

^a Korea University   (South Korea)

Author keywords

[No Author keywords available]

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EID: 0032282482     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (13)

1. D. V. Averin and K. K. Likharev, Single-Charge Tunneling (Plenum, New York, 1992), Chap. 9.
2. K. Yano, T. Ishii, T. Sano, T. Mine, F. Murai and K. Seki, Extended Abstract of SSDM 96, 266 (1996).
3. Also see, L. Guo, E. Leobandung and S. Y. Chou, Appl. Phys. Lett. 70, 850 (1997).
4. SENECA (Single Electron NanoElectronic Circuit Analyzer); L. R. C. Fonseca, A. N. Korotkov, K. K. Likharev and A. A. Odintsov, J. Appl. Phys. 78, 3238 (1995)).
5. MOSES (Monte-Carlo Single-Electronics Simulator); A. N. Korotov, R. H. Chen and K. K. Likharev, J. Appl. Phys. 78, 2520 (1995).
6. See, for example, HSPICE manual.
7. It is well known that this relation does not hold in an SET when only the tunneling currents are considered.
8. N. S. Bakhvalov, G. S. K, K. K. Likharev and S. I. Serdyukoba, Sov. Phys. JETP 68, 581 (1989).
9. E. H. Hauge and J. A. Stfvneng, Rev. Mod. Phys. 61, 917 (1989).
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11. S. Hershfield, J. H. Davies, P. Hyldgaard, C. J. Stanton and J. W. Wilkins, Phys. Rev. B47, 1967 (1992).
12. U. Hanke, Y. M. Garlperin and K. A. Chao, Phys. Rev. B50, 1595 (1994).
13. I. O. Kulik and R. I. Shekhter, Zh. Eksp. Teor. Fiz. 68, 623 (1975).