A study on the defects in the fabrication of CMOS retrograded well including a buried layer using MeV ion implantation

Journal of the Korean Physical Society

Volumn 33, Issue SUPPL. 2, 1998, Pages

  Jang, Yoon Taek ^a   Yoo, Seung Han ^a   Jae Sang, R O ^a  

^a Hong Ik University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032281339     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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