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Volumn 210, Issue 2, 1998, Pages 865-868

Effective mass calculation of the shallow acceptor ground state g-factor for A3B5 semiconductors

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EID: 0032274954     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199812)210:2<865::AID-PSSB865>3.0.CO;2-1     Document Type: Article
Times cited : (9)

References (11)
  • 6
    • 4644340958 scopus 로고
    • V. I. PEREL and I. N. YASSIEVICH, Zh. Eksper. Teor. Fiz. 82, 237, 1982 (Soviet Phys. - J. Exper. Theor. Phys. 55, 143 (1982)).
    • (1982) Soviet Phys. - J. Exper. Theor. Phys. , vol.55 , pp. 143
  • 8
    • 0016049936 scopus 로고
    • B. L. GELMONT and M. I. DYAKONOV, Fiz. Tekh. Poluprov. 7, 2013 (1973) (Soviet Phys. - Semicond. 7, 1345 (1974)).
    • (1974) Soviet Phys. - Semicond. , vol.7 , pp. 1345
  • 10
    • 0040441001 scopus 로고
    • R. I. DEEV, B. P. ZAKCHARCHENIA, and V. G. FLEISHER, Zh. Eksper. Teor. Fiz., Pisma 17, 244 (1973) (Soviet Phys. - J. Exper. Theor. Phys. Lett. 17, 174 (1973)).
    • (1973) Soviet Phys. - J. Exper. Theor. Phys. Lett. , vol.17 , pp. 174


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.