Two-dimensional A+ states in boron doped SiGe quantum structures

Solid-State Electronics

Volumn 40, Issue 1-8, 1996, Pages 97-99

  Yassievich, I N ^a   Schmalz, K ^b   Odnoblyudov, M A ^a   Kagan, M S ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b IHP   (Germany)

^c INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; BORON; GREEN'S FUNCTION; MATHEMATICAL MODELS; MATRIX ALGEBRA; NUMERICAL METHODS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

ELECTRON LOCALIZATION STATE; ENERGY LEVEL POSITION; LUTTINGER MATRIX OPERATOR QUADRATION; SCHRODINGER EQUATION; SECOND BOUND CARRIER; SPACE QUANTIZATION; ZERO RADIUS POTENTIAL MODEL;

ELECTRON ENERGY LEVELS;

EID: 0029718815     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00221-9     Document Type: Article

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