Strain-compensated InGaAs/AlGaAsP quantum well intersubband photodetectors for mid-IR wavelengths

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3287, Issue , 1998, Pages 80-87

  Bacher, K ^a   Liu, W K ^a   Wu, Y ^a   Stewart, T ^a  

^a Quantum Epitaxial Designs Inc   (United States)

Author keywords

AlGaAsP; InGaAs; IR Photodetector; QWIP; Strain compensation

Indexed keywords

INFRARED RADIATION; LATTICE CONSTANTS; PHOTODETECTORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; STRAIN; X RAY DIFFRACTION ANALYSIS;

4QUANTUM-WELL INTERSUBBAND PHOTODETECTORS (QWIP);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032225266     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.304468     Document Type: Conference Paper

References (9)

1. Molecular beam epitaxy of strain-compensated InGaAs/GaAsP quantum-well intersubband photodetectors
2. 1-xAs barriers
3. Photovoltaic intersubband detectors for 3-5 micron using GaAs quantum wells sandwiched between AlAs tunnel barriers
4. 0.55As multiple quantum well structures
5. Design criteria for structurally stable, highly strained multiple quantum well devices
6. 1-x Epitaxial Films Grown by Molecular Beam Deposition
7. 1-y Alloys by MBE
8. Transverse electric and transverse magnetic polarization active intersubband transitions in narrow InGaAs quantum wells
9. Normal Incident Intersubband Infrared Detector Using n-type InGaAs/GaAs Quantum Wells