Accurate HEMT model extraction and validation in class A and B bias points using a full two-port large signal on-wafer measurement system

Conference Proceedings of the International Symposium on Signals, Systems and Electronics

Volumn , Issue , 1998, Pages 427-431

  Curras Francos, M C ^a   Tasker, P J ^a   Fernandez Barciela, M ^a   O'Keefe, S S ^a   Sanchez, E ^a   Campos Roca, Y ^a   Edwards, G D ^a   Phillips, W A ^a  

^a UNIVERSITY OF VIGO   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS POINTS; LARGE SIGNAL WAVEFORM MEASUREMENTS; MICROWAVE TRANSITION ANALYZER; MODEL EXTRACTION; ON WAFER WAVEFORM MEASUREMENT SYSTEM;

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES MEASUREMENT; ELECTRIC WAVEFORMS; HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVE DEVICES; TABLE LOOKUP;

SEMICONDUCTOR DEVICE MODELS;

EID: 0032217901     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (8)

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2. F. van Ray and G. Kompa, "A new on-wafer largesignal waveform measurement system with 40 GHz harmonic bandwidth", IEEE MlT-S International Microwave Symposium Dig., pp. 1435-1438, 1992.
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