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Volumn 3, Issue , 1997, Pages 1499-1502
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Simplified nonquasi-static FET modelling approach experimentally validated up to 118.5 GHz
a a a a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ELECTROMAGNETIC DISPERSION;
FREQUENCIES;
SEMICONDUCTOR DEVICE MODELS;
LINEAR DELAYS;
LOW FREQUENCY DISPERSION;
NONQUASISTATIC MODELLING;
FIELD EFFECT TRANSISTORS;
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EID: 0030719787
PISSN: 0149645X
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (11)
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References (8)
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