Local and global simulations of bridgman and liquid-encapsulated czochralski crystal growth

Journal of Heat Transfer

Volumn 120, Issue 4, 1998, Pages 865-873

  Zhang, H ^a   Zheng, L L ^a   Prasad, V ^a   Larson, D J ^a  

^a Stony Brook University   (United States)

Author keywords

Materials Processing and Manufacturing Process; Moving boundaries; Phase Change Phenomena

Indexed keywords

BISMUTH CRYSTAL; BRIDGMAN-STOCKBARGER SYSTEM; LIQUID ENCAPSULATED CZOCHRALSKI TECHNIQUE;

COMPUTER SIMULATION; ENCAPSULATION; FINITE VOLUME METHOD; HEAT CONDUCTION; HEAT CONVECTION; HEAT RADIATION; INTERFACES (MATERIALS); MATHEMATICAL MODELS; NUMERICAL METHODS; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL CONDUCTIVITY;

CRYSTAL GROWTH FROM MELT;

CONVECTION; CRYSTALLIZATION; FINITE VOLUME TECHNIQUE; HEAT TRANSFER;

EID: 0032216262     PISSN: 00221481     EISSN: 15288943     Source Type: Journal    
DOI: 10.1115/1.2825905     Document Type: Article

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