Two silicon optical modulators realizable with a fully compatible bipolar process

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 4, Issue 6, 1998, Pages 1003-1010

  Breglio, Giovanni ^b,e   Cutolo, Antonello ^b,f   Irace, Andrea ^b,d   Spirito, Paolo ^a,b,e,g,h,i   Zeni, Luigi ^b,j,k   Iodice, Mario ^a,c   Sarro, Pasqualina M ^a,d  

^a IEEE   (Italy)

^b UNIVERSITY OF NAPLES FEDERICO II   (Italy)

^c Ist Elettromagnetismo/CE   (Italy)

^d DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^e Department of Electronic Engineering ^*  (Portugal)

^f STANFORD UNIVERSITY   (United States)

^g IBM T J WATSON RESEARCH CENTER   (United States)

^h Electronics Department of Naples   (Italy)

ⁱ National Group of Electronics of CNR

^j DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^k SECOND UNIVERSITY OF NAPLES   (Italy)

more..

Author keywords

Gratings; Integrated optoelectronics; Optical waveguides; Optoelectronic devices

Indexed keywords

BIPOLAR TRANSISTORS; COMPUTER SIMULATION; DIFFRACTION GRATINGS; FIELD EFFECT TRANSISTORS; INTEGRATED OPTOELECTRONICS; OPTICAL WAVEGUIDES; OPTOELECTRONIC DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES;

BRAGG REFLECTORS; PLASMA DISPERSION EFFECT;

LIGHT MODULATORS;

EID: 0032207956     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.736098     Document Type: Article

References (38)

1. J. I. Pankove, Optical Processes in Semiconductors. New York: Dover, 1975.
2. R. A. Soref, "Silicon-based optoelectronics," Proc. IEEE, vol. 81, pp. 1687-1706, Dec. 1993.
3. R. A. Soref and B. R. Bennett, "Electrooptical effects in silicon," IEEE J. Quantum Electron., vol. QE-23, pp. 123-129, 1987.
4. [4J T. S. Moss, G. J. Burrell, and B. Ellis, Semiconductor Opto-Electronics. London, U.K.: Butterworth, 1973.
5. S. R. Giguere, L. Friedman, R. A. Soref, and J. P. Lorenzo, "Simulation studies of silicon electro-optic waveguide devices," J. Appl. Phys., vol. 68, no. 10, pp. 4964-4970, 1990.
6. R. A. Soref and J. P. Lorenzo, "All silicon active and passive guided-wave components for λ = 1.3 μm and 1.6 μm," IEEE J. Quantum Electron., vol. QE-22, pp. 873-879, 1986.
7. B. N. Kurdi and D. G. Hall, "Optical waveguides in oxygen-implanted buried oxide silicon-on-insulator structures," Opt. Lett., vol. 13, pp. 175-177, 1988.
8. A. Rickman, G. T. Reed, B. L. Weiss, and F. Namavar, "Low loss planar optical waveguides fabricated in SIMOX material." IEEE Photon. Technol. Lett., vol. 4, pp. 633-635, 1992.
9. 2," J. Lightwave Technol., vol. 27, pp. 1971-1974, Aug. 1991.
10. H. Nishihara, M. Haruna, and T. Suhara, Optical Integrated Circuits. New York: McGraw-Hill, 1989.
11. M. K. Smit, "Integrated optics," Ph.D. dissertation, Delft University of Technology, Delft, The Netherlands, 1991.
12. T. Tamir, Ed., Guided-Wave Optoelectronics. Berlin, Germany: Springer-Verlag, 1990.
13. J. Schmidtchen, A. Splett, B. Schuppert, K. Petermann, and G. Burbach, "Low-loss singlemode optical waveguides with large cross-section in silicon-on-insulator," Electron. Lett., vol. 27, pp. 1486-1488, 1991.
14. B. R. Hemenway, O. Solgaard, and D. M. Bloom, "All-silicon integrated optical modulator for 1.3 μm fiber-optic interconnects," Appl. Phys. Lett., vol. 55, no. 4, pp. 349-350, 1989.
15. G. V. Treyz, P. G. May, and J. M. Halbout, "Silicon optical modulator at 1.3 μm based on free-carrier absorption," IEEE Electron Device Lett., vol. 12, pp. 276-278, June 1991.
16. _, "Silicon Mach-Zehnder waveguide interferometerrs based on the plasma dispersion effect," Appl. Phys. Lett., vol. 59, no. 7, pp. 771-773, 1991.
17. X. Xiao, J. C. Sturm, K. K. Goel, and P. V. Schwartz, "Fabry-Perot optical intensity modulator at 1.3 μm in silicon," IEEE Photon. Technol. Lett., vol. 3, pp. 230-231, Mar. 1991.
18. C. K. Tang and G. T. Reed, "Highly efficient optical phase modulator in SOI waveguides," Electron. Lett., vol. 31, no. 6, pp. 451-452, 1995.
19. C. Z. Zhao, G. Z. Li, E. K. Liu, Y. Gao, and X. D. Liu, "Silicon on insulator Mach-Zehnder waveguide interferometer operating at 1.3 μm," Appl. Phys. Lett., vol. 67, no. 17, pp. 2448-2449, 1995.
20. G. Cocorullo, F. Della Corte, I. Rendina, and A. Cutolo, "New possibilities for efficient silicon integrated electro-optical modulators," Optics Comm., vol. 86, pp. 228-235, 1991.
21. G. Cocorullo, M. Iodice, I. Rendina, and P. M. Sarro, "Silicon thermo-optical micro-modulator with 700 kHz -3 dB bandwidth," IEEE Photon. Technol. Lett., vol. 7, pp. 363-365, 1995.
22. G. Cocorullo and I. Rendina, "Thermo-optical modulation at 1.5 μm in silicon etalon," Electron. Lett., vol. 28, pp. 83-85, 1992.
23. C. K. Tang, G. T. Reed, A. J. Walton, and A. G. Rickman, "Low-loss, single-mode, optical phase modulator in SIMOX material," J. Lightwave Technol., vol. 12, pp. 1394-1400, Aug. 1994.
24. L. Friedman, R. A. Soref, and J. P. Lorenzo, "Silicon double-injection electro-optic modulator with junction gate control," J. Appl. Phys., vol. 63, no. 6, pp. 1831-1839, 1988.
25. R. A. Soref, D. L. McDaniel, and B. R. Bennett, "Guided-wave intensity modulator using amplitude-and-phase perturbations," J. Lightwave Technol, vol. 6, pp. 437-444, Mar. 1988.
26. J. P. Lorenzo and R. A. Soref, "1.3 μm electro-optic silicon switch," Appl. Phys. Lett., vol. 51, no. 1, pp. 6-8, 1987.
27. Y. L. Liu, E. K. Liu, S. L. Zhang, G. Z. Li, and J. S. Luo, "Silicon 1 × 2 digital optical switch using plasma dispersion," Electron. Lett., vol. 30, no. 2, pp. 130-131, 1994.
28. Y. Liu, E. Liu, G. Li, S. Zhang, and J. Luo, "Novel silicon waveguide switch based on total internal reflection," Appl. Phys. Lett., vol. 64, no. 16, pp. 2079-2080, 1994.
29. L. K. Nanver, E. J. G. Goudena, and H. W. van Zeijl, "DIMES-01, a baseline BIFET process for smart sensor experimentation," Sensors and Actuators A, vol. 36, pp. 139-147, 1993.
30. G. Cocorullo, F. G. Della Corte, M. Iodice, I. Rendina, and P. M. Sarro, "Enhancement of propagation characteristics in all-silicon waveguide by ion implantation," in Proc. OSA Victoria Meetings, Integrated Photonics Research'98, Victoria, BC, Canada, 1998.
31. P. Spirito, G. V. Persiano, and A. G. M. Strollo, "The bipolar mode FET: A new power device combining FET with BJT operation," Microelectron. J., vol. 24, pp. 61-74, 1993.
32. P. Spirito, A. G. M. Strollo, and A. Caruso, "Two-dimensional analysis of the I-V characteristics of normally-off bipolar-mode FET devices," Solid State Electron., vol. 33, pp. 1401-1417, 1990.
33. MEDICI User's Manual, TMA Inc., Palo Alto, CA, 1992.
34. A. Yariv and M. Nakamura, "Periodic structures for integrated optics," IEEE J. Quantum Electron., vol. QE-13, pp. 233-253, Apr. 1977.
35. W. Streifer, D. R. Scrifers, and R. D. Burnham, "TM-mode coupling coefficients in guided-wave distributed feedback lasers," IEEE J. Quantum Electron., vol. QE-12, pp. 74-78, Feb. 1976.
36. A. Cutolo, M. Iodice, A. Irace, P. Spirito, and L. Zeni, "An electrically controlled Bragg reflector integrated in a silicon rib SOI waveguide," Appl. Phys. Lett., vol. 71, no. 2, pp. 199-201, 1997.
37. G. Coppola, A. Irace, A. Cutolo, and M. Iodice, "Effect of fabrication errors in periodically perturbed channel waveguides," Appl. Opt., submitted.
38. A. Cutolo, M. Iodice, P. Spirito, and L. Zeni, "Silicon electro-optic modulator based on a three terminal device integrated in a low-loss single-mode SOI waveguide," J. Lightwave Technol., vol. 15, pp. 505-518, Mar. 1997.