Asymmetric strain-symmetrized Ge-Si interminiband laser

IEEE Photonics Technology Letters

Volumn 10, Issue 12, 1998, Pages 1715-1717

  Friedman, Lionel ^b   Soref, Richard A ^a,b   Sun, Gregory ^c   Lu, Yanwu ^c  

^a IEEE

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c UNIVERSITY OF MASSACHUSETTS BOSTON   (United States)

Author keywords

Germanium; Semiconductor lasers; Silicon; Superlattice

Indexed keywords

CALCULATIONS; CURRENT DENSITY; OPTICAL WAVEGUIDES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES;

BUFFER LAYERS; THRESHOLD CURRENT DENSITY;

SEMICONDUCTOR LASERS;

EID: 0032288719     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.730479     Document Type: Article

References (7)

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