Silicon/glass wafer-to-wafer bonding with Ti/Ni intermediate bonding

Sensors and Actuators, A: Physical

Volumn 71, Issue 1-2, 1998, Pages 123-126

  Xiao, Zhi Xiong ^a   Wu, Guo Ying ^a   Zhang, Dacheng ^a   Zhang, Guobing ^a   Li, Zhi Hong ^a   Hao, Yi Long ^a   Wang, Yang Yuan ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Adhesion; Silicon glass wafer to wafer bonding; Ti Ni film

Indexed keywords

ADHESION; METALLIC FILMS; NICKEL; NICKEL COMPOUNDS; SEMICONDUCTING GLASS; SILICON WAFERS; TITANIUM; X RAY DIFFRACTION ANALYSIS;

SILICIDES; WAFER-TO-WAFER BONDING;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 0032207508     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(98)00152-6     Document Type: Article

References (12)

1. S.P. Murarka, Silicides for VLSI Applications, Academic Press, 1983.
2. T. Iijima, A. Nishiyama, Y. Ushiku, T. Ohguro, I. Kunishima, K. Suguro, H. Iwai, A new contact plug technique for deep-submicrometer ULSIs employing selective nickel silicidation of polysilicon with titanium nitride stopper, IEEE Trans. Electron Devices 40 (1993) 371.
3. S.P. Murarka, D.B. Fraser, A.K. Sinha, H.J. Levinstein, E.J. Lloyd, R. Liu, D.S. Williams, S.J. Hillenius, Self-aligned cobalt disilicide for gate and interconnection and contacts to shallow junction, IEEE Trans. Electron Devices 34 (1987) 2108.
4. M. Tabasky, E.S. Bulat, B.M. Ditchek, M.A. Sullivan, S.C. Shatas, Direct silicidation of Co on Si by rapid thermal annealing, IEEE Trans. Electron Devices ED-34 (1987) 548.
5. T. Morimoto, H.S. Momose, T. Iinuma, I. Kunishima, K. Suguro, H. Okano, I. Katakabe, H. Nakajima, H. Tsuchiaki, M. Tsuchiaki, M. Ono, Y. Katsumata, H. Iwai, A NiSi silicide technology for advanced logic devices, IEDM 91, p. 653.
6. K. Ljungberg, A. Söderbärg, A.-L. Tiensuu, S. Johansson, G. Thungström, C.S. Petersson, Buried cobalt silicide layers in silicon created by wafer bonding, J. Electrochem. Soc. 141 (1994) 2829.
7. M.S. Ismail, R.W. Bower, Platinum silicide fusion bonding, Electron. Lett. 27 (1991) 1153.
8. R.F. Wolffenbuttel, K.D. Wise, Low-temperature silicon wafer-to-wafer bonding using gold at eutectic temperature, Sensors and Actuators A 43 ( 1994) 223.
9. G. Wallis, D.I. Pomerantz, Field assisted glass - metal sealing, J. Appl. Phys. 40 (1969) 3946-3949.
10. J.W. Berenschot, J.G.E. Gardeniers, T.S.J. Lammerink, M. Elwenspoek, New application of r.f.-sputtered glass films as protection and anodic layers in silicon micromachining, Sensors and Actuators A 41-42 (1994) 338-343.
11. A. Cozma, B. Puers, Characterization of the electrostatic bonding of silicon and Pyrex glass, J. Micromech. Microeng. 5 (1995) 98.
12. Y. Matsumoto, M. Esashi, Integrated silicon capacitive accelerometer with PLL servo technique, Sensors and Actuators A 39 (1993) 209-217.