Effects of the screening and mirror charges on electron mobility in the subthreshold region of Si MOSFETs

Solid-State Electronics

Volumn 39, Issue 9, 1996, Pages 1371-1377

  Ohkura, Y ^a   Kimura, S ^a   Ihara, S ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CARRIER CONCENTRATION; DEFECTS; ELECTRON TRANSPORT PROPERTIES; SCATTERING; SURFACES;

ELECTRON IMPURITY INTERACTION; GATE ELECTRODE; IMPURITY INTERACTION; IMPURITY SCATTERING; MIRROR CHARGES; QUANTIZATION EFFECTS; SUBTHRESHOLD REGION; SURFACE MOBILITY; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 0030241041     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(96)00050-0     Document Type: Review

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