Evolution of surface morphology of vicinal Si(111) surfaces after aluminum deposition

Surface Science

Volumn 418, Issue 1, 1998, Pages 22-31

  Schwennicke, C ^a   Wang, X S ^a,b   Einstein, T L ^a   Williams, E D ^a  

^a Bldg 142   (United States)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Aluminum; Epitaxy; LEED; Scanning Tunneling Microscopy; Silicon; Stepped single crystal surfaces; Surface morphology; Surface thermodynamics; Vicinal single crystal surfaces

Indexed keywords

ADSORPTION; ALUMINUM; CRYSTAL ORIENTATION; DEPOSITION; EPITAXIAL GROWTH; LOW ENERGY ELECTRON DIFFRACTION; MORPHOLOGY; ORDER DISORDER TRANSITIONS; PHASE SEPARATION; SCANNING TUNNELING MICROSCOPY; SINGLE CRYSTALS; SURFACE STRUCTURE;

STEPPED SINGLE CRYSTALS; VICINAL SINGLE CRYSTALS;

SEMICONDUCTING SILICON;

EID: 0032206444     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00658-X     Document Type: Article

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