Step structures on Br-chemisorbed vicinal Si (111)

Surface Science

Volumn 400, Issue 1-3, 1998, Pages 220-231

  Wang, Xue Sen ^a,b   Williams, Ellen D ^b  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b University of Maryland   (United States)

Author keywords

Auger electron spectroscopy; Bromine; Chemisorption; Etching; Faceting; Halogens; High index single crystal surfaces; Low energy electron diffraction; Scanning tunneling microscopy; Silicon; Stepped single crystal surfaces

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; BROMINE; CHEMISORPTION; ETCHING; LOW ENERGY ELECTRON DIFFRACTION; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SINGLE CRYSTALS; SURFACE ROUGHNESS; THERMODYNAMICS;

HIGH INDEX SINGLE CRYSTALS; SURFACE TOPOGRAPHY;

SILICON;

EID: 0032027747     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00864-9     Document Type: Article

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