Radiation effects in double-sided silicon sensors for CDF

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 418, Issue 1, 1998, Pages 120-127

  Worm, S ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; COLLIDING BEAM ACCELERATORS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; PROTON IRRADIATION; RADIATION EFFECTS; RADIATION HARDENING; SEMICONDUCTOR DOPING; SILICON SENSORS;

SILICON VERTEX DETECTORS;

PARTICLE DETECTORS;

EID: 0032206223     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(98)00724-4     Document Type: Article

References (11)

1. SVX-II Simulation Study And Upgrade Proposal, CDF Internal Note Number 1922 (1992).
2. Hamamatsu Photonics KK, Solid State Division, Hamamatsu, 435 Japan, and Micron Semiconductor Limited, Lancing, Sussex BN15 8UN, UK.
3. Y. Iwata et al., IEEE Trans. Nucl. Sci. NS-45 (3) (1998).
4. L. Spiegel and the Fermilab E.S.&H. group.
5. A. Chilingarov et al., Nucl. Instr. and Meth. A 360 (1995) 432.
6. R. Wunstorf, Ph.D. Dissertation, Universität Hamburg, 1992.
7. E. Barberis et al., Nucl. Instr. and Meth. A 342 (1994) 90.
8. A. Brandl et al., Nucl. Instr. and Meth. A 399 (1997) 76.
9. Grant Gorfine, private communication.
10. CDF Upgrade Technical Design Report, D. Amidei (Ed.), CDF Internal Note Number 3777.
11. R. Wheadon, Nucl. Instr. and Meth. A 342 (1994) 126.