RF technique for determining ambipolar carrier lifetime in pin RF switching diodes

Electronics Letters

Volumn 34, Issue 23, 1998, Pages 2277-2278

  Caverly, R H ^a  

^a Villanova University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC REACTANCE MEASUREMENT; MICROWAVE MEASUREMENT; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SWITCHING CIRCUITS;

AMBIPOLAR CARRIER LIFETIME; RADIOFREQUENCY MEASUREMENT; SWITCHING DIODES;

SEMICONDUCTOR DIODES;

EID: 0032206081     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981568     Document Type: Article

References (6)

1. RAY, U.C., GUPTA, A.K., and MONGA, K.: 'Measurements of minoritycarrier lifetime in PIN diodes', Microw. J., 1996, 39, (7), pp. 134-142
2. DHARIWAL, S.R., and SHARMA, R.C.: 'Ramp recovery in p-i-n diodes: General mathematical formulation and comparison with other methods of lifetime measurement', Solid-State Electron., 1992, 35, (11), pp. 1675-1682
3. SZCZESNY, J., and JELENSKI, A.: 'A new method for carrier lifetime measurements in PIN diodes', Solid-State Electron., 1989, 32, (2), pp. 125-130
4. CAVERLY, R., and HILLER, G.: 'The small signal ac impedance of gallium arsenide and silicon PIN diodes', Solid-State Electron., 1990, 33, (10), pp. 1255-1263
5. LEBEDEV, I.V., DROZDOVSKAYA, L.M., DROZDOVSKIJ, N.V., and SHNITKOV, A.S.: 'Determination of the active component of pindiode impedance', Radiotekh. Elektron., 1996, 41, (3), pp. 370-373
6. VARSHNEY, R., ROULSTON, D., and CHAMBERLAIN, S.: 'Some properties concerning the a.c. impedance of P-I-N and P-N-N+ diodes', Solid-State Electron., 1974, 17, pp. 699-706