Measurements of minority-carrier lifetime in pin diodes

Microwave Journal

Volumn 39, Issue 7, 1996, Pages 134-142

  Ray, U C ^a   Gupta, A K ^a   Monga, Kavita ^a  

^a SOLID STATE PHYSICS LABORATORY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC NETWORK ANALYSIS; MATHEMATICAL MODELS; MICROWAVE DEVICES; SWITCHING CIRCUITS;

MICROWAVE SWITCHING; MINORITY CARRIER LIFETIMES; PIN DIODES; REVERSE RECOVERY TECHNIQUE;

SEMICONDUCTOR DIODES;

EID: 0030189015     PISSN: 01926225     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)

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4. Catalog of Radar Products Division, M/A-COM.
5. M. Derdouri, P. Leturcq and Muñoz-Yagüe, "A Comparative Study of Methods of Measuring Carrier Lifetime in PIN Devices," IEEE Transactions on Electron Devices, ED-27, No. 11, November 1980, pp. 2097-2101.
6. "PIN Diode Basics," Application Note 80200, Alpha Industries Inc.
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11. J.L. Moll, U.C. Ray and S.C. Jain, "Reverse Recovery in p-n Junction Diodes with Built-in Drift Fields," Solid-state Electronics, Vol. 26, No. 11, 1983, pp. 1077-1081.
12. S.K. Agarwal, S.C. Jam and Harsh, "Variation of Minority Carrier Lifetime with Level of Injection in p-n Junction Devices," Electronics Letters, April 1982, Vol. 18, No. 7, pp. 298-299.