Epitaxial cobalt silicide formation using high-temperature sputtering and vacuum annealing

Materials Research Society Symposium - Proceedings

Volumn 440, Issue , 1997, Pages 435-440

  Inoue, K ^a   Tung, R T ^a   Mikagi, K ^a   Chikaki, S ^a   Kikkawa, T ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; FILM GROWTH; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); OXIDATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SPUTTERING; SUBSTRATES; THERMODYNAMIC STABILITY; VACUUM APPLICATIONS;

COBALT SILICIDE; SILICIDATION; VACUUM ANNEALING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031332418     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)