Nonhomogeneous pattern formation in the dissolution processes of novolak-diazonaphthoquinone resists

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 11, 1998, Pages 6266-6269

  Kanzaki, Kenichi ^a   Ohfuji, Takeshi ^b,c   Sasago, Masaru ^b,d   Tagawa, Seiichi ^a  

^a OSAKA UNIVERSITY   (Japan)

^b ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

^c SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^d PANASONIC CORPORATION   (Japan)

Author keywords

AFM; Development; Nonhomogeneous pattern; Novolak; Photoresist; Resist surface; Sensitivity

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISSOLUTION; NITROGEN COMPOUNDS; PERCOLATION (SOLID STATE); SURFACE STRUCTURE;

DIAZONAPHTHOQUINONE;

PHOTORESISTS;

EID: 0032202678     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.6266     Document Type: Article

References (8)

1. K. Kamon, K. Nakazawa, A. Yamaguchi, N. Matsuzawa, T. Ohfuji and S. Tagawa: Proc. SPIE 3049 (1997) 180.
2. K. Kanzaki, K. Kamon, T. Ohfuji, M. Sasago and S. Tagawa: Third Int. Symp. 193 nm Lithography Dig. Abstr., 1997, p. 113.
3. K. Kamon, N. Nakazawa, A. Yamaguchi, N. Matsuzawa, T. Ohfuji, K. Kanzaki and S. Tagawa: J. Vac. Sci. Technol. B 15 (1998) 2610.
4. D. R. Allee, A. N. Broers and R. F. W. Pease: Proc. IEEE 79 (1991) 1093.
5. O. Sus: Liebigs Ann. Chem. 556 (1944) 65.
6. R. A. Arcus: Proc. SPIE 631 (1986) 124.
7. W. D. Hinsberg, C. G. Willson and K. K. Kanazawa: Proc. SPIE 539 (1985) 6.
8. M. Hanabata, Y. Takahashi, Y. Uetani and H. Ozaki: Sumitomo Kagaku 1 (1997) 21 [in Japanese].