Highly purified silane gas for advanced silicon semiconductor devices

Journal of the Electrochemical Society

Volumn 145, Issue 10, 1998, Pages 3560-3569

  Ohki, Atsushi ^a   Ohmi, Tadahiro ^a,c   Date, Junichi ^b   Kijima, Takahiko ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b Osaka Sanso Kogyo Limited   (Japan)

^c ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

IMPURITIES; ION SOURCES; MASS SPECTROMETERS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; TECHNOLOGY; THIN FILMS;

ATMOSPHERIC PRESSURE IONIZATION MASS SPECTROMETER; SILICON SEMICONDUCTOR DEVICES;

SILANES;

EID: 0032187725     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838843     Document Type: Article

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