Liquid source chemical vapor deposition of high-dielectric-constant (Ba, Sr)TiO3 films

Electrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi)

Volumn 125, Issue 1, 1998, Pages 47-54

  Kawahara, Takaaki ^a   Yamamuka, Mikio ^a   Yuuki, Akimasa ^a   Ono, Kouichi ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

(Ba, Sr)TiO3; Gbit scale DRAM; Liquid source CVD; Pt; Ru; Step coverage; Two step deposition

Indexed keywords

ANNEALING; CAPACITANCE; CAPACITOR STORAGE; CHEMICAL VAPOR DEPOSITION; DYNAMIC RANDOM ACCESS STORAGE; PERMITTIVITY;

GIGABIT SCALE DYNAMIC RANDOM ACCESS MEMORY;

DIELECTRIC FILMS;

EID: 0032187682     PISSN: 04247760     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1520-6416(199810)125:1<47::aid-eej6>3.3.co;2-a     Document Type: Article

References (11)

1. 3/Ru stacked capacitors using X-ray lithography. Dig. Int. Electron Devices Meet-ing, Washington, D.C., 1995 (IEEE, New York), p. 903.
2. 3 thin films on a thick storage node of Ru. Dig. Int. Electron Devices Meeting, Washington, D.C., 1995 (IEEE, New York), p. 115.
3. 2. Japan J. Appl. Phys., Vol. 33, p. 5129 (1994).
4. 3 films prepared by two-step deposition of liquid source chemical vapor deposition. Japan. J. Appl. Phys., Vol. 34, p. 5077 (1995).
5. A. Grill et al. Base electrodes for high dielectric constant oxide materials in silicon technology. J. Mater. Res., Vol. 7, p. 3260 (1992).
6. 2 capacitor heterostructures. Appl. Phys. Lett., Vol. 66, p. 239 (1995).
7. 2 plasma. Ext. Abstr., 43rd Spring Meet. Japan Society of Applied Physics, Asaka, March 1996, 28a-ZV-10 (in Japanese).
8. 3. Extended Abstracts of the International Conference on SSDM, p. 797.
9. 2 thin film formation by MOCVD. Step average on micro-trenches. Kagaku Kogaku Ronbunshu, Vol. 18, p. 212 (1992). (in Japanese)
10. 3 thin films. Japan J. Appl. Phys., Vol. 34, p. 5478 (1995).
11. 3 films prepared by liquid source chemical vapor deposition on Ru electrodes. Japan J. Appl. Phys., Vol. 35, p. 4880 (1996).