Kinetics of carbon tetrachloride decomposition during the metalorganic vapor-phase epitaxy of gallium arsenide and indium arsenide

Journal of Crystal Growth

Volumn 193, Issue 3, 1998, Pages 305-315

  Begarney, M J ^a   Warddrip, M L ^a   Kappers, M J ^a   Hicks, R F ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Carbon doping; Carbon tetrachloride; Gallium arsenide; MOVPE

Indexed keywords

CARBON TETRACHLORIDE; COMPOSITION EFFECTS; DECOMPOSITION; ETCHING; METALLORGANIC VAPOR PHASE EPITAXY; PARTIAL PRESSURE; PRESSURE EFFECTS; REACTION KINETICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

INDIUM ARSENIDE;

SEMICONDUCTING FILMS;

EID: 0032184043     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00548-X     Document Type: Article

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