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Volumn 26, Issue 10, 1997, Pages 1189-1193

Mechanism of doping gallium arsenide with carbon tetrachloride during organometallic vapor-phase epitaxy

Author keywords

Carbon doping; Carbon tetrachloride; GaAs (001); Organometallic vapor phase epitaxy (OMVPE); Scanning tunneling microscopy (STM); TPD

Indexed keywords

ADSORPTION; CARBON TETRACHLORIDE; DECOMPOSITION; ETCHING; FILM GROWTH; INFRARED SPECTROSCOPY; METALLORGANIC VAPOR PHASE EPITAXY; REACTION KINETICS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; TEMPERATURE PROGRAMMED DESORPTION;

EID: 0031258795     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0018-7     Document Type: Article
Times cited : (2)

References (21)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.