|
Volumn 26, Issue 10, 1997, Pages 1189-1193
|
Mechanism of doping gallium arsenide with carbon tetrachloride during organometallic vapor-phase epitaxy
a a a a a a a |
Author keywords
Carbon doping; Carbon tetrachloride; GaAs (001); Organometallic vapor phase epitaxy (OMVPE); Scanning tunneling microscopy (STM); TPD
|
Indexed keywords
ADSORPTION;
CARBON TETRACHLORIDE;
DECOMPOSITION;
ETCHING;
FILM GROWTH;
INFRARED SPECTROSCOPY;
METALLORGANIC VAPOR PHASE EPITAXY;
REACTION KINETICS;
SCANNING TUNNELING MICROSCOPY;
SEMICONDUCTING FILMS;
SEMICONDUCTOR DOPING;
TEMPERATURE PROGRAMMED DESORPTION;
TERTIARYBUTYLARSINE;
TRIETHYLGALLIUM;
SEMICONDUCTING GALLIUM ARSENIDE;
|
EID: 0031258795
PISSN: 03615235
EISSN: None
Source Type: Journal
DOI: 10.1007/s11664-997-0018-7 Document Type: Article |
Times cited : (2)
|
References (21)
|