Specific nonthermal chemical structural transformation induced by microwaves in a single amphiphilic bilayer self-assembled on silicon

Langmuir

Volumn 14, Issue 21, 1998, Pages 5988-5993

  Maoz, Rivka ^a   Cohen, Hagai ^a   Sagiv, Jacob ^a  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMAGNETIC WAVE ABSORPTION; MICROWAVE HEATING; MOLECULAR STRUCTURE; SILICON;

MOLECULAR FILMS;

MONOLAYERS;

EID: 0032183403     PISSN: 07437463     EISSN: None     Source Type: Journal    
DOI: 10.1021/la980223r     Document Type: Article

References (43)

1. (a) Metaxas, A. C.; Meredith, R. J. Industrial Microwave Heating; Peter Peregrinus: London, 1983.
2. (b) Microwave Processing of Materials; Sutton, W. H., Brooks, M. M., Chabinsky, I. J., Eds.; MRS Symposium Proceedings Vol. 124; MRS: Pittsburgh, PA, 1988.
3. (c) Introduction to Microwave Sample Preparation; (Skip) Kingston, H. M., Jassie, L. B., Eds.; American Chemical Society: Washington, DC, 1988.
4. (a) Thuillier, F. M.; Jullien, H.; Grenier Loustalot, M.-F. Polym. Commun. 1986, 27, 206.
5. (b) Beldjoudi, N.; Gourdenne, A. Eur. Polym. J. 1988, 24, 53.
6. Mingos, D. M. P.; Baghurst, D. R. Chem. Soc. Rev. 1991, 20, 1 and reference therein.
7. Marand, E.; Baker, K. R.; Geaybeal, J. D. Macromolecules 1992, 25, 2243.
8. Lewis, D. A.; Summers, J. D.; Ward, T. C.; McGrath, J. E. J. Polym. Sci., Part A: Polym. Chem. 1992, 30, 1647.
9. Binner, J. G. P.; Hassine, N. A.; Cross, T. E. J. Mater. Sci. 1995, 30, 5389.
10. IEEE Trans. Microwave Theory Technol. 1996, 44, Special Issue on Medical Applications and Biological Effects of RF/Microwaves.
11. (a) Gedye, R.; Smith, F.; Westaway, K.; Ali, H.; Baldisera, L.; Laberge, L.; Rousell, J. Tetrahedron Lett. 1986, 27, 279.
12. (b) Giguere, R. J.; Bray, T. L.; Duncan, S. M.; Majetich, G. Tetrahedron Lett. 1986, 27, 4945.
13. (a) Caddick, S. Tetrahedron 1995, 51, 10403 and references therein.
14. (b) Strauss, C. R.; Trainor, R. W. Aust. J. Chem. 1995, 48, 1665 and references therein.
15. (c) Jacob, J.; Chia, L. H. L.; Boey, F. Y. C. J. Mater. Sci. 1995, 30, 5321 and references therein.
16. (d) Galema, S. A. Chem. Soc. Rev. 1997, 26, 233 and references therein.
17. (e) Bose, A. K.; Banik, B. K.; Lavlinskaia, N.; Jayaraman, M.; Manhas, M. S. CHEMTECH 1997, 18.
18. (a) Laurent, R.; Laporterie, A.; Dubac, J.; Berlan, J.; Lefeuvre, S.; Audhuy, M. J. Org. Chem. 1992, 57, 7099.
19. (b) Shibata, C.; Kashima, T.; Ohuchi, K. Jpn. J. Appl. Phys. 1996, 35, 316.
20. (a) Loupy, A.; Pigeon, P.; Ramdani, M. Tetrahedron 1996, 52, 6705.
21. (b) Baldwin, B. W.; Hirose, T.; Wang, Z.-H. Chem. Commun. 1996, 2669.
22. Stuerga, D.; Gonon, K.; Lallemant, M. Tetrahedron 1993, 49, 6229.
23. It shold be understood that the processes considered here do not include plasmas produced by microwave rf-induced discharge in a gas phase.
24. Daniel, V. V. Dielectric Relaxation; Academic Press: London, 1967; pp 217-221.
25. Maoz, R.; Sagiv, J.; Degenhardt, D.; Möhwald, H.; Quint, P. Supramol. Sci. 1995, 2, 9.
26. Maoz, R.; Matlis, S.; DiMasi, E.; Ocko, B. M.; Sagiv, J. Nature 1996, 384, 150.
27. (a) DeTar, D. F.; Novak, R. W. J. Am. Chem. Soc. 1970, 92, 1361.
28. (b) Lindeman, R.; Zundel, G. J. Chem. Soc., Faraday Trans. 1977, 73, 788.
29. Jones, C. A.; Petty, M. C.; Roberts, G. G.; Davies, G.; Yarwood, J.; Ratcliffe, M. M.; Barton, J. W. Thin Solid Films 1987, 155, 187.
30. Davies, G. H.; Yarwood, J.; Petty, M. C.; Jones, C. A. Thin Solid Films 1988, 159, 461.
31. Jones, C. A.; Petty, M. C.; Davies, G.; Yarwood, J. J. Phys. D: Appl. Phys. 1988, 21, 95.
32. 3 Experimental data relating the conversion to the time of irradiation (at a selected power setting of the microwave oven) were recorded; however, since the very simple experimental setup employed in this study does not allow us to determine the actual amount of electromagnetic energy absorved by the reacting bilayer, we cannot offer, at this stage, a quantitative analysis of the kinetics of the observed microwave-induced chemical transformation.
33. (a) Sagiv, J. Isr. J. Chem. 1979, 18, 346.
34. (b) Wulff, G. Angew. Chem., Int. Ed. Engl. 1995, 34, 1812.
35. (c) Kallury, K. M. R.; Thompson, M.; Tripp, C. P.; Hair, M. L. Langmuir 1992, 8, 947.
36. Hargreaves, M. K.; Pritchard, J. G.; Dave, H. R. Chem. Rev. 1970, 70, 439.
37. Casal, H.; Cameron, D. G.; Mantsch, H. Can. J. Chem. 1983, 61, 1736.
38. Frydman, E.; Cohen, H.; Maoz, R.; Sagiv, J. Langmuir 1997, 13, 5089.
39. Considering the depth-dependence of the XPS signals, the stoichiometric and experimentally observed N/C=O ration should be closely related only if N and C=O reside at comparable depths below the outer film surface, as expected for each of the three samples listed in Table 1 (see Figure 1).
40. (a) Bartell, L. S.; Ruch, R. J. J. Phys. Chem. 1959, 63, 1045.
41. (b) Gun, J.; Sagiv, J. J. Colloid Interface Sci. 1986, 112, 457.
42. Maoz, R.; Yam, R.; Berkovic, G.; Sagiv, J. In Thin Films; Ulman, A., Ed.; Academic Press: San Diego, CA, 1995; Vol. 20, p 41.
43. Simple considerations of heat capacity and flow would rule out the possible that a molecular stratum of microwave-active reaction centers (the amine-acid pairs in Figure 1, left) positioned by means of inert hydrocarbon spacers (the paraffinic tails) at a distance of ∼25 Å fron both the silicon substrate and its outher environment could store heat in amounts that would give rise to a significant temperature gradient across the spacer layers. Under the given irradiation conditions, such a stratum of reaction centers must therefore be thermally equilibrated with both the surface of the silicon substrate and its near outer environment, implying that the surface temperature estimated by the direct procedures emplyed cannot differ significantly from the actual maximal temperatures felt by the reaction centers themeselves.