Electron injection in semiconductor drift detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 416, Issue 1, 1998, Pages 70-80

  Bellwied, R ^a   Beuttenmuller, R ^b   Chen, W ^b   DiMassimo, D ^b   Dou, L ^a   Dyke, H ^c   French, A ^a   Hall, J R ^a   Hoffmann, G W ^d   Humanic, T ^c   Kotov, I V ^c,e   Kraner, H W ^b   Li, Z ^b   Lynn, D ^b   Ott, G ^d   Pandey, S U ^a   Pruneau, C ^a   Rykov, V L ^a   Schambach, J ^d   Sedlmeir, J ^b   Sugarbaker, E ^c   Takahashi, J ^a,f   Wilson, W K ^a   more..

^a WAYNE STATE UNIVERSITY   (United States)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

^c OHIO STATE UNIVERSITY   (United States)

^d UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^e INSTITUTE FOR HIGH ENERGY PHYSICS   (Russian Federation)

^f UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CALIBRATION; ELECTRONS; MAGNETIC FIELD EFFECTS; MOS DEVICES; SEMICONDUCTING SILICON;

ELECTRON INJECTION;

DRIFT CHAMBERS;

EID: 0032181235     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(98)00561-0     Document Type: Article

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