Transport properties of electrons in silicon drift detectors measured in large magnetic fields

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 383, Issue 2-3, 1996, Pages 537-546

  Pandey, S U ^a   Cooper, D ^a   Dyke, H ^a   Elliot, D ^a   Humanic, T J ^a   Kirkman, J ^a   Kotov, I V ^a   Lo Curto, G ^a   Sugarbaker, E ^a   Vilkelis, G ^a   Bellwied, R ^b   Dou, L ^b   French, A ^b   Hall, J ^b   Pruneau, C ^b   Rykov, V ^b   Takahashi, J ^b   Wilson, W K ^b   Beuttenmueller, R ^c   Chen, W ^c   DiMassimo, D ^c   Kraner, H W ^c   Liaw, C J ^c   Lynn, D ^c   Sedlmeir, J ^c   Hoffmann, G W ^d   Paganis, S ^d   Read, D ^d   Schambach, J ^d   more..

^a OHIO STATE UNIVERSITY   (United States)

^b WAYNE STATE UNIVERSITY   (United States)

^c BROOKHAVEN NATIONAL LABORATORY   (United States)

^d UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC CHARGE MEASUREMENT; ELECTRON TRANSPORT PROPERTIES; HALL EFFECT; LASER BEAM EFFECTS; LASER PULSES; MAGNETORESISTANCE; SILICON SENSORS; SOLID STATE LASERS;

DRIFT MOBILITY; HALL MOBILITY; SILICON DRIFT DETECTORS;

PARTICLE DETECTORS;

EID: 0030403578     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(96)00778-4     Document Type: Article

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