XPS investigation of niobium implanted into sapphire after annealing in reducing atmosphere

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 143, Issue 4, 1998, Pages 479-487

  Huang, N K ^a   Tsuchiya, B ^b   Neubeck, K ^b   Yamamoto, S ^b   Narumi, K ^b   Aoki, Y ^b   Abe, H ^b   Miyashita, A ^b   Ohno, H ^b   Naramoto, H ^b  

^a SICHUAN UNIVERSITY   (China)

^b TAKASAKI ADVANCED RADIATION RESEARCH INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON ENERGY LEVELS; ION IMPLANTATION; OXIDATION; POSITIVE IONS; SAPPHIRE; X RAY PHOTOELECTRON SPECTROSCOPY;

CHARGE STATE;

NIOBIUM;

EID: 0032180022     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00406-6     Document Type: Article

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