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Volumn 165, Issue 2, 1998, Pages 367-376
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The behavior of radiation damage of Nb+ ion implanted sapphire after annealing at reducing atmosphere
a a,c b b b b b b
c
STA
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
CRYSTAL ORIENTATION;
DENSITY (OPTICAL);
ION IMPLANTATION;
LIGHT ABSORPTION;
NIOBIUM COMPOUNDS;
RADIATION DAMAGE;
SINGLE CRYSTALS;
ANNEALING TEMPERATURE;
ION DAMAGE;
SAPPHIRE;
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EID: 0032000741
PISSN: 00318965
EISSN: None
Source Type: Journal
DOI: 10.1002/(SICI)1521-396X(199802)165:2<367::AID-PSSA367>3.0.CO;2-C Document Type: Article |
Times cited : (10)
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References (19)
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