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Volumn 106, Issue 10, 1998, Pages 980-983

Analysis of crystallographic orientation of elongated β-Si3N4 particles in In Situ Si3N4 composite by electron back scattered diffraction method

(4) Yasutomi, Yoshiyuki a Sakaida, Yoshihisa a Hirosaki, Naoto b Ikuhara, Yuichi c

a JAPAN FINE CERAMICS CENTER (Japan)

b NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

c UNIVERSITY OF TOKYO (Japan)

Author keywords

Crystallographic orientation; Electron back scattered diffraction analysis; Elongated Si3N4 particles; MgO; Microstructure; Sapphire; Si3N4 ceramics; Silicon; Single crystal

Indexed keywords

CRYSTAL GROWTH; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; ELECTRON DIFFRACTION; MAGNESIA; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SILICON NITRIDE; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON BACK SCATTERED DIFFRACTION (EBSD);

CERAMIC MATERIALS;

EID: 0032178975 PISSN: 09145400 EISSN: None Source Type: Journal
DOI: 10.2109/jcersj.106.980 Document Type: Article

Times cited : (2)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.