Fabrication and characterization of electrostatically driven silicon microbeams

Microelectronics Journal

Volumn 29, Issue 9, 1998, Pages 641-644

  Attia, P ^a   Boutry, M ^a   Bosseboeuf, A ^a   Hesto, P ^a  

^a CNRS   (France)

Author keywords

Electrostatic actuation; Micromechanical silicon device; R.I.E. etching

Indexed keywords

CHARACTERIZATION; DRY ETCHING; ELECTRODES; FABRICATION; MICROELECTRONIC PROCESSING; REACTIVE ION ETCHING; SINGLE CRYSTALS; TENSILE STRESS; TUNGSTEN;

ELECTROSTATIC ACTUATION; MICROMECHANICAL SILICON DEVICES;

MICROELECTROMECHANICAL DEVICES;

EID: 0032165794     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2692(98)00028-7     Document Type: Article

References (8)

1. J.J. Yao, M.F. Chang, A surface micromachined miniature switch for telecommunications applications with signal frequencies from DC up to 4 GHz, Transducers 95, Eurosensors IX, Stockholm, Sweden, 1995, p. 384.
2. S. Roy, M. Mehregany, Fabrication of electrostatic nickel microrelays by nickel surface micromachining, Proc. IEEE, MEMS 95, Amsterdam, The Netherlands, 1995, p. 353.
3. K.A. Shaw, Z.L. Zhang, N.C. MacDonald, SCREAM I: a single-crystal silicon process for microelectromechanical structures, Proc. IEEE, MEMS 93, p. 155.
4. H. Jansen, H. Gardeniers, J. Fluitman, A survey on the reactive ion etching of silicon in microtechnology, Micromechanics Europe (1995) 18.
5. S. Murakawa, J.P. McVittie, Mechanism of surface charging effects on etching profile defects, Jpn. J. Appl. Phys. 33 (1994) 2184.
6. M. Boutry, A. Bosseboeuf, T. Bourouina, J.P. Grandchamp, E. Dufour, J.P. Gilles, Accuracy of thin film stress measurement with c-Si microbeams fabricated by dry etching, J. Vac. Sci. Technol. B (submitted).
7. M. Mamor, E. Dufour-Gergam, L. Finkmann, G. Tremblay, F. Meyer, K. Bouziane, W/Si Schottky diodes: effect of sputtering deposition conditions on the barrier height. Appl. Surf. Sci. 91 (1995) 342.
8. W.C. Tang, M.G. Lim, R.T. Howe, Electrostatic comb drive levitation and control method. J. Microelectromechanical Systems 1 (4) (1992) 170.