Effects of implanted materials on impurity-induced layer disordering in strained Ga0.8In0.2As/GaxIn1-xAs yP1-y/Ga0.51In0.49P/GaAs quantum well structure

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 10 SUPPL. B, 1997, Pages

  Jang, Dong Hoon ^a   Lee, Jung Kee ^a   Park, Kyung Hyun ^a   Cho, Ho Sung ^a   Seong, Tae Yeon ^b   Park, Chul Soon ^a   Pyun, Kwang Eui ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Implantation; Impurity induced layer disordering (IILD); Quantum well; Transmission electron microscopy (TEM)

Indexed keywords

ANNEALING; BORON; CRYSTAL IMPURITIES; HETEROJUNCTIONS; ION IMPLANTATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

IMPURITY INDUCED LAYER DISORDERING (IILD);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031246337     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l1364     Document Type: Article

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