-
1
-
-
0011769714
-
Rapid heteroepitaxial growth of Ge films on (100) GaAs by pulsed supersonic free-jet chemical beam epitaxy
-
Eres D, Lowndes DH, Tischler JZ. Rapid heteroepitaxial growth of Ge films on (100) GaAs by pulsed supersonic free-jet chemical beam epitaxy. Appl Phys Lett 1989;55:1008.
-
(1989)
Appl Phys Lett
, vol.55
, pp. 1008
-
-
Eres, D.1
Lowndes, D.H.2
Tischler, J.Z.3
-
2
-
-
0346171206
-
High speed epitaxy using supersonic molecular jets
-
Atwater H.A., Houle F.A., Lowndes D.H., editors.
-
Eres D. High speed epitaxy using supersonic molecular jets. In: Atwater H.A., Houle F.A., Lowndes D.H., editors. Surface chemistry and beam-solid interactions, Mater Res Soc Symp Proc, 1991;201:11.
-
(1991)
Surface Chemistry and Beam-Solid Interactions, Mater Res Soc Symp Proc
, vol.201
, pp. 11
-
-
Eres, D.1
-
3
-
-
0031524035
-
Growth and characterization of thin films employing supersonic jets
-
Pachecho KA, Ferguson BA, Mullins CB. Growth and characterization of thin films employing supersonic jets. J Vac Sci Tech A 1997;15(4):2190-5.
-
(1997)
J Vac Sci Tech A
, vol.15
, Issue.4
, pp. 2190-2195
-
-
Pachecho, K.A.1
Ferguson, B.A.2
Mullins, C.B.3
-
5
-
-
0000109099
-
Dynamics of the dissociative adsorption of disilane on Si(100): Energy scaling and the effect of corrugation
-
Engstrom JR, Hansen DA, Furjanic MJ, Xia LQ. Dynamics of the dissociative adsorption of disilane on Si(100): energy scaling and the effect of corrugation. J Chem Phys 1993;99:4051-4.
-
(1993)
J Chem Phys
, vol.99
, pp. 4051-4054
-
-
Engstrom, J.R.1
Hansen, D.A.2
Furjanic, M.J.3
Xia, L.Q.4
-
7
-
-
0348062662
-
Monte Carlo simulation of silicon thin film deposition using supersonic molecular beams
-
Shen C., editor. Beijing: Peking University Press
-
Chen G., Boyd I.D. Monte Carlo simulation of silicon thin film deposition using supersonic molecular beams. In: Shen C., editor. Rarefied gas dynamics. Beijing: Peking University Press, 1997. p. 573.
-
(1997)
Rarefied Gas Dynamics
, pp. 573
-
-
Chen, G.1
Boyd, I.D.2
-
8
-
-
0032381069
-
Monte Carlo analysis of a hyperthermal silicon deposition process
-
Chen G, Boyd ID, Roadman SE, Engstrom JR. Monte Carlo analysis of a hyperthermal silicon deposition process. J Vac Sci Tech A 1998;16(2):689-99.
-
(1998)
J Vac Sci Tech A
, vol.16
, Issue.2
, pp. 689-699
-
-
Chen, G.1
Boyd, I.D.2
Roadman, S.E.3
Engstrom, J.R.4
-
10
-
-
0011181531
-
Mass flow through a circular orifice and a two dimensional slit at high Knudsen numbers
-
Willis DR. Mass flow through a circular orifice and a two dimensional slit at high Knudsen numbers. J Fluid Mech 1965;21:21-31.
-
(1965)
J Fluid Mech
, vol.21
, pp. 21-31
-
-
Willis, D.R.1
-
11
-
-
0014467218
-
Mass flow rate for nearly-free molecular slit flow
-
Stewart JD. Mass flow rate for nearly-free molecular slit flow. J Fluid Mech 1969;35:599-608.
-
(1969)
J Fluid Mech
, vol.35
, pp. 599-608
-
-
Stewart, J.D.1
-
12
-
-
0346801747
-
Nearly free-molecular slit flow at finite pressure and temperature ratios
-
Wang PY, Yu EY. Nearly free-molecular slit flow at finite pressure and temperature ratios. J Fluid Mech 1971;50:565-77.
-
(1971)
J Fluid Mech
, vol.50
, pp. 565-577
-
-
Wang, P.Y.1
Yu, E.Y.2
-
13
-
-
0026630785
-
Numerical simulation of rarefied gas flow through a slit
-
Chung CH, Jeng DR, DeWitt KJ, Keith TG, Jr. Numerical simulation of rarefied gas flow through a slit. J Thermophys Heat Transf 1992;6(1):27-34.
-
(1992)
J Thermophys Heat Transf
, vol.6
, Issue.1
, pp. 27-34
-
-
Ch, C.1
Jeng, D.R.2
DeWitt, K.J.3
Keith T.G., Jr.4
-
14
-
-
0003158036
-
Free jet sources
-
Scoles G., editor. Oxford, Oxford Press
-
Miller D.R. Free jet sources. In Scoles G., editor. Atomic and molecular beam methods. Oxford, Oxford Press, 1988.
-
(1988)
Atomic and Molecular Beam Methods
-
-
Miller, D.R.1
-
15
-
-
0346171199
-
-
private communication
-
Engstrom J.R., private communication.
-
-
-
Engstrom, J.R.1
-
16
-
-
0000037051
-
The role of surface corrugation in direct translational activated dissociative adsorption
-
Xia LQ, Engstrom JR. The role of surface corrugation in direct translational activated dissociative adsorption. J Chem Phys 1994;101(6):5329-42.
-
(1994)
J Chem Phys
, vol.101
, Issue.6
, pp. 5329-5342
-
-
Xia, L.Q.1
Engstrom, J.R.2
|