Thermal reliability of n-GaAs/Ti/Pt/Au Schottky contacts with thin Ti films for reduced gate resistance

Thin Solid Films

Volumn 330, Issue 2, 1998, Pages 146-149

  Sehgal, B K ^a   Bhattacharya, B ^a   Vinayak, Seema ^a   Gulati, Ramesh ^a  

^a SOLID STATE PHYSICS LABORATORY   (India)

Author keywords

Backscattering; Schottky

Indexed keywords

ANNEALING; ELECTRIC CONTACTS; GATES (TRANSISTOR); GOLD; INTERDIFFUSION (SOLIDS); MICROSCOPIC EXAMINATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS; THERMODYNAMIC STABILITY; THIN FILMS; TITANIUM;

SCHOTTKY CONTACTS;

METALLIC FILMS;

EID: 0032156649     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)00756-1     Document Type: Article

References (15)

1. U.K. Mishra, A.S. Brown, L.M. Jelloian, L.H. Hackett, M.J. Delaney, IEEE Electron Device Lett. ED-9 (1988) 41.
2. A.K. Gupta, E.V. Korpinen, A. Chen, D.S. Mathews, IEEE Trans. Electron Devices ED-37 (1990) 1209.
3. J. Wurfl, B. Janke, U. Merkel, E. Nebauer, in: L. Krishan (Ed.), Semiconductor Devices, Narorsa, New Delhi, 1996, p. 88.
4. G. Donzelli, A. Paccagnella, IEEE Trans. Electron Devices ED-34 (1987) 957.
5. H. Fukui, Bell System Tech. J., 58 (3) (1979) 771.
6. M. Shur, GaAs Devices and Circuits, Plenum, NY, 1987.
7. P. Wolf, IBM J. Res. Dev., 14 (1970) 125.
8. A.K. Sinha, T.K. Smith, M.H. Read, J.M. Poate, Solid-State Electron., 19 (1976) 489.
9. O. Wada, N. Yanagisawa, H. Takanasha, Appl. Phys. Lett., 29 (1976) 263.
10. K.B. Kim, M. Kniffin, R. Sinclair, C.R. Helms, J. Vac. Sci. Technol., A6 (3) (1988) 1473.
11. B.K. Sehgal, R. Gulati, A.A. Naik, S. Vinayak, D.S. Rawal, H.S. Sharma, Materials Sci. Eng., B48 (1997) 229.
12. J.R. Waldrop, Appl. Phys. Lett., 44 (1984) 1002.
13. J.P. Sullivan, R.T. Tung, M.R. Pinto, W.R. Graham, J. Appl. Phys., 70 (1991) 7403.
14. C. Fontaine, T. Okumura, K.N. Tu, J. Appl. Phys., 54 (1983) 1404.
15. L. Lu-Min Yeh, P.H. Holloway, J. Vac. Sci. Technol., A3 (6) (1988) 1478.