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Volumn 48, Issue 3, 1997, Pages 229-233

(n)GaAs/Ti/Pt/Au Schottky contacts and their effect on MESFET's dc parameters

Author keywords

MESFET's dc parameters; Schottky contacts; Semiconductors

Indexed keywords

ANNEALING; FILMS; MAGNETRON SPUTTERING; MESFET DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; TITANIUM;

LIFT OFF PROCESS; SCHOTTKY CONTACTS;

SCHOTTKY BARRIER DIODES;

EID: 0043265688 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(97)00042-1 Document Type: Article

Times cited : (4)

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