Electron correlation effects at semiconductor surfaces and interfaces: Si(111)-5x5, Si(111)-7x7 and Sn/Ge(111)

Progress in Surface Science

Volumn 59, Issue 1-4, 1998, Pages 233-243

  Ortega, J ^a   Flores, F ^a   Perez R ^a   Levy Yeyati, A ^a  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; INTERFACES (MATERIALS); SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SURFACE PROPERTIES; TIN;

DANGLING SURFACE BAND; TWO-DIMENSIONAL HAMILTONIAN ANALYSIS;

SEMICONDUCTOR MATERIALS;

EID: 0032156645     PISSN: 00796816     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0079-6816(98)00049-5     Document Type: Article

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