Metal-insulator transition for K on GaAs(100)-as rich surfaces

Applied Surface Science

Volumn 104-105, Issue , 1996, Pages 248-252

  Levy Yeyati, A ^a   Martin Rodero A ^a   Flores, F ^a   Ortega, J ^a   Rincon R ^a  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITIVES; ARSENIC; GREEN'S FUNCTION; MATHEMATICAL MODELS; METAL INSULATOR BOUNDARIES; POTASSIUM; SURFACE STRUCTURE;

HAMILTONIAN;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 4243420581     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00152-3     Document Type: Article

References (20)

1. W.E. Spicer, Appl. Surf. Sci. 41/42 (1989) 1; M. Prietsch et al., Phys. Rev. Lett. 60 (1988) 436; L.J. Whitman et al., Phys. Rev. Lett. 66 (1991) 1338.
2. W.E. Spicer, Appl. Surf. Sci. 41/42 (1989) 1; M. Prietsch et al., Phys. Rev. Lett. 60 (1988) 436; L.J. Whitman et al., Phys. Rev. Lett. 66 (1991) 1338.
3. W.E. Spicer, Appl. Surf. Sci. 41/42 (1989) 1; M. Prietsch et al., Phys. Rev. Lett. 60 (1988) 436; L.J. Whitman et al., Phys. Rev. Lett. 66 (1991) 1338.
4. N.J. DiNardo et al., Phys. Rev. Lett. 64 (1990) 2177; O. Pankratov et al., Phys. Rev. Lett. 70 (1993) 351; F. Flores et al., Phys. Low-Dim. Struct. 1 (1994) 23.
5. N.J. DiNardo et al., Phys. Rev. Lett. 64 (1990) 2177; O. Pankratov et al., Phys. Rev. Lett. 70 (1993) 351; F. Flores et al., Phys. Low-Dim. Struct. 1 (1994) 23.
6. N.J. DiNardo et al., Phys. Rev. Lett. 64 (1990) 2177; O. Pankratov et al., Phys. Rev. Lett. 70 (1993) 351; F. Flores et al., Phys. Low-Dim. Struct. 1 (1994) 23.
7. F. Flores and C. Tejedor, J. Phys. C 20 (1987) 145; J. Tersoff, Phys. Rev. Lett. 52 (1984) 465.
8. F. Flores and C. Tejedor, J. Phys. C 20 (1987) 145; J. Tersoff, Phys. Rev. Lett. 52 (1984) 465.
9. D. Mao et al., Phys. Rev. B 45 (1992) 1273; R.E. Viturro et al., J. Vac. Sci. Technol. B 7 (1989) 1007; C.J. Spindt et al., J. Vac. Sci. Technol. B 9 (1991) 2090; S.P. Wilks et al., J. Vac. Sci. Technol. B 9 (1991) 2118.
10. D. Mao et al., Phys. Rev. B 45 (1992) 1273; R.E. Viturro et al., J. Vac. Sci. Technol. B 7 (1989) 1007; C.J. Spindt et al., J. Vac. Sci. Technol. B 9 (1991) 2090; S.P. Wilks et al., J. Vac. Sci. Technol. B 9 (1991) 2118.
11. D. Mao et al., Phys. Rev. B 45 (1992) 1273; R.E. Viturro et al., J. Vac. Sci. Technol. B 7 (1989) 1007; C.J. Spindt et al., J. Vac. Sci. Technol. B 9 (1991) 2090; S.P. Wilks et al., J. Vac. Sci. Technol. B 9 (1991) 2118.
12. D. Mao et al., Phys. Rev. B 45 (1992) 1273; R.E. Viturro et al., J. Vac. Sci. Technol. B 7 (1989) 1007; C.J. Spindt et al., J. Vac. Sci. Technol. B 9 (1991) 2090; S.P. Wilks et al., J. Vac. Sci. Technol. B 9 (1991) 2118.
13. R. Rincón et al., Phys. Rev. B 52 (1995) 16345.
14. D.J. Chadi, J. Vac. Sci. Technol. A 5 (1987) 834.
15. F.J. García-Vidal et al., Phys. Rev. B 44 (1991) 11412.
16. F.J. García-Vidal et al., Phys. Rev. B 50 (1994) 10537.
17. F. Mila and X. Zotos, Europhys. Lett. 24 (1993) 133.
18. M. Rozemberg et al., Phys. Rev. Lett. 69 (1992) 1236.
19. A. Martín-Rodero et al., Solid State Commun. 44 (1982) 911.
20. A. Levy Yeyati et al., Phys. Rev. Lett. 71 (1993) 2991.