The effect of acceleration voltages on the preparation of CuInSe2 thin films by ionized cluster beam technique

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 9 PART A/B, 1998, Pages

  Sano, Hiroyuki ^a   Ishibashi, Takayuki ^b   Sato, Katsuaki ^b  

^a STANLEY ELECTRIC CO LTD   (Japan)

^b TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Acceleration voltage; Chalcopyrite type compounds; CulnSe2; Ionized cluster beam technique; KCN treatment; Low temperature deposition; Rutherford backscattering spectrometry

Indexed keywords

CHEMICAL OPERATIONS; CRYSTAL GROWTH; ELECTRIC FIELD EFFECTS; FILM PREPARATION; ION BEAMS; IONIZATION; LOW TEMPERATURE EFFECTS; PROBES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

ACCELERATION VOLTAGES; CHALCOPYRITE TYPE COMPOUNDS; COPPER INDIUM SELENIDE; ELECTRON PROBE MICROANALYZER; IONIZED CLUSTER BEAM TECHNIQUE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0032155649     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l1070     Document Type: Article

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