High performance (fr∼500GHz) In0.52Al0.48As/ In0.53Ga0.47As/InP quantum wire modfets employing asymmetric coupled-well channels

International Journal of Infrared and Millimeter Waves

Volumn 19, Issue 8, 1998, Pages 1047-1058

  Heller, E K ^a   Islam, S K ^b   Zhao, G ^a   Jain, F C ^a  

^a UNIVERSITY OF CONNECTICUT   (United States)

^b UNIVERSITY OF NORTH FLORIDA   (United States)

Author keywords

CoupledWell MODFET; InGaAs MODFET; Quantum Wire MODFET; Submillimeter MODFET

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; FREQUENCY RESPONSE; INTERFACES (MATERIALS); MILLIMETER WAVE DEVICES; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WIRES;

MODULATION DOPED FIELD EFFECT TRANSISTORS (MODFET);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032139652     PISSN: 01959271     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1022639129427     Document Type: Article

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