Formation of polycrystalline silicon films on glass substrates at low-temperatures by a direct negative Si ion beam deposition system

Journal of Crystal Growth

Volumn 191, Issue 4, 1998, Pages 718-722

  Choi, D J ^a   Kim, Y H ^a   Han, D W ^a   Baik, H K ^a   Kim, S I ^b  

^a Yonsei University   (South Korea)

^b SKION Corporation   (United States)

Author keywords

Metal ion beam deposition; Negative ion beam; Polycrystalline silicon thin films

Indexed keywords

DEPOSITION; ELECTRIC CONDUCTIVITY OF SOLIDS; GLASS; GRAIN SIZE AND SHAPE; ION BEAMS; ION SOURCES; NEGATIVE IONS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

DIRECT METAL ION BEAM DEPOSITION (DMIBD);

SEMICONDUCTING FILMS;

EID: 0032137721     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00370-4     Document Type: Article

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